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  92706 / 62005 ms pc no.8349-1/5 LA6584M overview the LA6584M is single-phase bipolar fan motor is put into silent driving by means of btl output linear drive, offering high efficiency and power saving by suppressing the reactive current. lock protection and rotation signal (fg, rd) circuits are built in, ensuring optimum application to small fans for notebook pc, consumer equipment power supply, car audio system, cpu cooler, etc. that require high reliability and low noise. functions and applications ? single-phase full-wave driver for fan motor specitications absolute maximum ratings at ta = 25 c parameter symbol conditions ratings unit output voltage v cc max 15 v allowable dissipation pd max mounted on a specified board* 1.5 w output current i out max 1.6 a output withstand voltage v out max 15 v rd/fg output pin output withstand voltage vrd/fg max 15 v rd/fg output current ird/fg max 5ma hb output voltage ib max 10 ma operating temperature topr -30 to +90 c storage temperature tstg -55 to +150 c *mounted on a specified board (114.376.11.6mm, glass epoxy) recommended operating range at ta = 25 c parameter symbol conditions ratings unit supply voltage v cc 2.8 to 14.0 v common-phase input voltage range of hall input vicm 0 to v cc -1.5 v ordering number : enn8349 monolithic linear ic btl driver single-phase full-wave fan motor driver any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before using any sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein.
LA6584M no.8349-2/5 electrical characteristics at ta = 25 c, v cc = 12 v, unless especially specified. ratings parameter symbol conditions min typ max unit i cc 1 during drive (ct = l) 4 6 9 ma circuit current i cc 2 during lock protection (ct = h) 2 4 6 ma lock detection capacitor charge current ict1 2.0 2.8 3.5 a capacitor discharge curre nt ict2 0.15 0.23 0.30 a capacitor charge and discharge current ratio rct rcd = ict1/ict2 9 12 15 - ct charge voltage vc t1 1.6 1.7 1.8 v ct discharge voltage vc t2 0.6 0.7 0.8 v out output l saturation voltage vol i o = 200 ma 0.2 0.3 v out output h saturation voltage voh i o = 200 ma 0.9 1.2 v hall input sensitivity vhn zero peak value (including offset and hysteresis) 7 15 mv rd/fg output pin l voltage vrd/fg ird/fg = 5 ma 0.1 0.2 v rd/fg output pin leak current ird/fgl vrd/fg = 15 v 1 30 a hb output l voltage vhbl ihb = 5 ma 1.3 1.5 1.7 v package dimensions unit : mm 3097b
LA6584M no.8349-3/5 truth table in- in+ ct out1 out2 fg rd mode h l h l l l h l l h h l during rotation - - h off off - h during overheat protection pin assignment LA6584M out1 ct hb in- rd fg in+ v cc gnd out2 (nc) (nc) (nc) (nc) f-gnd f-gnd f-gnd f-gnd (nc) (nc) top view
LA6584M no.8349-4/5 sample application circuit *1 when di to prevent breakdow n in case of reverse connect ion is used, it is necessary to insert a capacitor cr to secure the regenerative current route. similarly, cr is necessary to enhance the re liability when there is no capacitor near the fan power line. *2 to obtain hall bias from v cc , carry out 1/2v cc bias as shown in the figure. linear driving is made through voltage control of the coil by amplifying the hall output. when the hall element output is large, the startup performance and efficiency are impr oved. adjustment of the hall elem ent can reduce the noise further. *3 when the hall bias is taken from the hb pin, constant-vo ltage bias is made with about 2.0 v. therefore, the hall element can provide the output satis factory in temperature characteristics. adjustment of the hall output amplitude is made with r1. (when v cc = 12 v, the step *2 above proves advantageous for ic heat generation.) *4 keep this open when not used. *5 when the wiring from the hall output to ic hall in put is long, noise may be carried through the wiring. in this case, insert the capacitor as shown in the figure. gnd v cc fg out1 out2 in+ in- hb *1 di cr *2 on board element h r2 r2 h r1 *3 in+ in- hb *5 rd *4 *6 ct
LA6584M no.8349-5/5 internal equivalent circuit h 1.5vrg fg out1 out2 hb v cc in+ in- gnd discharge pulse control circuit charge/discharge circuit rd ct=0.47 to 1f ps specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of june, 2005. specifications and information herein are subject to change without notice.


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